Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistorsHosoi, Takuji*; Osako, Momoe*; Moges, K.*; Ito, Koji*; Kimoto, Tsunenobu*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*
Applied Physics Express, 15(6), p.061003_1 - 061003_5, 2022/06
Times Cited Count：2 Percentile：34.67(Physics, Applied)The combination of NO annealing and subsequent post-nitridation annealing (PNA) in CO ambient for SiO/SiC structures has been demonstrated to be effective in obtaining both high channel mobility and superior threshold voltage stability in SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs). N atoms on the SiO side of the SiO/SiC interface incorporated by NO annealing, which are plausible cause of charge trapping sites, could be selectively removed by CO-PNA at 1300
C without oxidizing the SiC. CO-PNA was also effective in compensating oxygen vacancies in SiO, resulting high immunity against both positive and negative bias-temperature stresses.
Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.
Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01
Times Cited Count：14 Percentile：54.92(Physics, Applied)Shibata, Yuichi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi; Ooka, Sachiyo*; Takamoto, Tatsuya*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.65 - 68, 2015/11
Radiation response is one of the important properties for space solar cells. It should be well understood so as to accurately predict their degradation in orbit and also to improve their radiation tolerance. Recently, a phenomenon, recovery from the radiation degradation by light soaking, on inverted metamorphic (IMM) triple-junction (3J) solar cells was found out. In this work, the light soaking annealing effects on electron irradiated IMM 3J solar cells are reported. IMM 3J solar cells irradiated with 1 MeV electrons with the fluence of 3
10
e
/cm
showed the recovery of open-circuit voltage, Voc, up to 43 mV after light (AM0, 1 sun) soaking of 3 hours. The increment of the electroluminescence intensity for InGaP in the IMM 3J cells due to the light soaking suggests that the Voc recovery occurs in InGaP top-cell rather than GaAs middle-cell or InGaAs bottom-cell.
-FeSi
films on Si substrateYamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Thin Solid Films, 508(1-2), p.367 - 370, 2006/06
Times Cited Count：12 Percentile：49.71(Materials Science, Multidisciplinary)no abstracts in English
-FeSi thin film prepared by ion beam sputter deposition methodShimura, Kenichiro; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Sasase, Masato*; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.673 - 675, 2006/01
Times Cited Count：6 Percentile：43.85(Instruments & Instrumentation)no abstracts in English
Yamamoto, Etsuji; Haga, Yoshinori; Matsuda, Tatsuma; Inada, Yoshihiko*; Settai, Rikio*; Tokiwa, Yoshifumi*; Onuki, Yoshichika
Acta Physica Polonica B, 34(2), p.1059 - 1062, 2003/00
no abstracts in English
Iwata, Minoru*; Imai, Fumikazu*; Nakayama, Yoichi*; Imagawa, Kichiro*; Sugimoto, Masaki; Morishita, Norio; Tanaka, Shigeru
Proceedings of 23rd International Symposium on Space Technology and Science (ISTS-23), Vol.1, p.513 - 518, 2002/00
no abstracts in English
SrCaCuO
single crystals by neutron irradiation followed by thermal annealingNakano, M.*; Ogikubo, Koji*; Terai, Takayuki*; Yamaguchi, Kenji; Yamawaki, Michio*
Physica C, 357-360(Part.1), p.277 - 279, 2001/09
no abstracts in English
SrCaCuO single crystals due to thermal annealingOgikubo, Koji*; Nakano, M.*; Terai, Takayuki*; Yamaguchi, Kenji; Yamawaki, Michio*
Physica C, 357-360(Part.1), p.280 - 283, 2001/09
no abstracts in English
Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi
Materials Science Forum, 353-356, p.537 - 540, 2001/00
no abstracts in English
Frank, T.*; Weidner, M.*; Ito, Hisayoshi; Pensl, G.*
Materials Science Forum, 353-356, p.439 - 442, 2001/00
no abstracts in English
M.Laube*; G.Pensl*; Ito, Hisayoshi
Applied Physics Letters, 74(16), p.2292 - 2294, 1999/04
Times Cited Count：53 Percentile：86.81(Physics, Applied)no abstracts in English
Uedono, Akira*; *; Morishita, Norio; Ito, Hisayoshi; Tanigawa, Shoichiro*; Fujii, Satoshi*; *
Journal of Physics; Condensed Matter, 11(25), p.4925 - 4934, 1999/00
Times Cited Count：12 Percentile：57.06(Physics, Condensed Matter)no abstracts in English
Igawa, Naoki; Nagasaki, Takanori*; Ishii, Yoshinobu; Noda, Kenji; Ono, Hideo; Morii, Yukio; Fernandez-Baca, J. A.*
J. Mater. Sci., 33, p.4747 - 4758, 1998/00
Times Cited Count：6 Percentile：31.59(Materials Science, Multidisciplinary)no abstracts in English
Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.
Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00
no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00
no abstracts in English
Takahashi, Yoshihiro*; Imaki, Shunsaku*; Onishi, Kazunori*; Yoshikawa, Masahito
Proceedings of IEEE 1995 International Coferece on Microelectronic Test Structures, Vol.8, p.243 - 246, 1995/03
no abstracts in English
annealing due to 
-ray irradiation; Gate voltage dependenceImaki, Shunsaku*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*
Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.151 - 152, 1995/00
no abstracts in English
Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito
Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00
no abstracts in English
Tamada, Masao; Omichi, Hideki; *
Thin Solid Films, 268, p.18 - 21, 1995/00
Times Cited Count：34 Percentile：84.62(Materials Science, Multidisciplinary)no abstracts in English
